? 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which the composition is cycled as a result of oxidizing and annealing levels. Due to preferential oxidation of Si around Ge [68], the first Si1–Nghiên c?u c?a FDA ??a ra k?t lu?n r?ng germani, khi s? ??ng nh? là ch?t b? sung dinh